Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / 2N5401,116

| Manufacturer Part Number | 2N5401,116 |
|---|---|
| Future Part Number | FT-2N5401,116 |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | - |
| 2N5401,116 Status (Lifecycle) | In Stock |
| Part Status | Obsolete |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 300mA |
| Voltage - Collector Emitter Breakdown (Max) | 150V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Power - Max | 630mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) |
| Supplier Device Package | TO-92-3 |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| 2N5401,116 Weight | Contact Us |
| Replacement Part Number | 2N5401,116-FT |

ZTX560
Diodes Incorporated

ZTX560STZ
Diodes Incorporated

ZTX601STZ
Diodes Incorporated

ZTX603STZ
Diodes Incorporated

ZTX605STZ
Diodes Incorporated

ZTX653STZ
Diodes Incorporated

ZTX657STZ
Diodes Incorporated

ZTX658
Diodes Incorporated

ZTX688BSTZ
Diodes Incorporated

ZTX689BSTZ
Diodes Incorporated

A3PE600-1FG256I
Microsemi Corporation

EPF8452ATC100-4
Intel

10M25DAF484I6G
Intel

5SGXEA3K2F40C3
Intel

5SGXEB6R3F43I3LN
Intel

XC6VLX240T-1FFG784I
Xilinx Inc.

A42MX09-2PL84I
Microsemi Corporation

LFXP10E-4F256I
Lattice Semiconductor Corporation

EP1S40F780I6
Intel

EPF10K50RI240-4
Intel