Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / AOW11S65

| Manufacturer Part Number | AOW11S65 |
|---|---|
| Future Part Number | FT-AOW11S65 |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | aMOS™ |
| AOW11S65 Status (Lifecycle) | In Stock |
| Part Status | Not For New Designs |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 650V |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 399 mOhm @ 5.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 13.2nC @ 10V |
| Vgs (Max) | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 646pF @ 100V |
| FET Feature | - |
| Power Dissipation (Max) | 198W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-262 |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| AOW11S65 Weight | Contact Us |
| Replacement Part Number | AOW11S65-FT |

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