Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Single / APT30GP60B2DLG
Manufacturer Part Number | APT30GP60B2DLG |
---|---|
Future Part Number | FT-APT30GP60B2DLG |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
APT30GP60B2DLG Status (Lifecycle) | In Stock |
Part Status | Active |
IGBT Type | PT |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 100A |
Current - Collector Pulsed (Icm) | 120A |
Vce(on) (Max) @ Vge, Ic | 2.7V @ 15V, 30A |
Power - Max | 463W |
Switching Energy | 260µJ (on), 250µJ (off) |
Input Type | Standard |
Gate Charge | 90nC |
Td (on/off) @ 25°C | 13ns/55ns |
Test Condition | 400V, 30A, 5 Ohm, 15V |
Reverse Recovery Time (trr) | - |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-247-3 |
Supplier Device Package | T-MAX™ |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
APT30GP60B2DLG Weight | Contact Us |
Replacement Part Number | APT30GP60B2DLG-FT |
RJH60D7DPM-00#T1
Renesas Electronics America
RJP60D0DPM-00#T1
Renesas Electronics America
RJP60F0DPM-00#T1
Renesas Electronics America
RJP60F5DPM-00#T1
Renesas Electronics America
RJH60F7DPQ-A0#T0
Renesas Electronics America
RJH60D7BDPQ-E0#T2
Renesas Electronics America
RJH60D7DPQ-E0#T2
Renesas Electronics America
RJP65T43DPQ-A0#T2
Renesas Electronics America
RJH60F3DPQ-A0#T0
Renesas Electronics America
RJH60D5BDPQ-E0#T2
Renesas Electronics America
LFEC6E-3T144C
Lattice Semiconductor Corporation
LFE2-20E-6Q208C
Lattice Semiconductor Corporation
A54SX32A-2TQ176I
Microsemi Corporation
AGL1000V5-FG484
Microsemi Corporation
EPF10K50VFC484-3
Intel
5SGSED8K3F40I3N
Intel
A54SX32A-2TQG100
Microsemi Corporation
LFE2M50E-5F900C
Lattice Semiconductor Corporation
LFXP2-30E-5F484I
Lattice Semiconductor Corporation
EPF10K10AQI208-3
Intel