Home / Products / Discrete Semiconductor Products / Transistors - IGBTs - Modules / BSM100GB170DN2HOSA1
Manufacturer Part Number | BSM100GB170DN2HOSA1 |
---|---|
Future Part Number | FT-BSM100GB170DN2HOSA1 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
BSM100GB170DN2HOSA1 Status (Lifecycle) | In Stock |
Part Status | Obsolete |
IGBT Type | - |
Configuration | Half Bridge |
Voltage - Collector Emitter Breakdown (Max) | 1700V |
Current - Collector (Ic) (Max) | 145A |
Power - Max | 1000W |
Vce(on) (Max) @ Vge, Ic | 3.9V @ 15V, 100A |
Current - Collector Cutoff (Max) | 1mA |
Input Capacitance (Cies) @ Vce | 16nF @ 25V |
Input | Standard |
NTC Thermistor | No |
Operating Temperature | 150°C (TJ) |
Mounting Type | Chassis Mount |
Package / Case | Module |
Supplier Device Package | Module |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
BSM100GB170DN2HOSA1 Weight | Contact Us |
Replacement Part Number | BSM100GB170DN2HOSA1-FT |
APTGT150DA170G
Microsemi Corporation
APTGT150DA60TG
Microsemi Corporation
APTGT150DU170G
Microsemi Corporation
APTGT150DU60TG
Microsemi Corporation
APTGT150SK120D1G
Microsemi Corporation
APTGT150SK120TG
Microsemi Corporation
APTGT150SK170D1G
Microsemi Corporation
APTGT150SK60TG
Microsemi Corporation
APTGT200A60TG
Microsemi Corporation
APTGT200DA170D3G
Microsemi Corporation
A1425A-1PQG100I
Microsemi Corporation
XC7S100-L1FGGA676I
Xilinx Inc.
A3P125-PQG208I
Microsemi Corporation
MPF500T-FCG1152E
Microsemi Corporation
EP20K200EFC484-2XN
Intel
EP4SGX290NF45I3N
Intel
XC7K70T-L2FBG484E
Xilinx Inc.
LCMXO1200C-3MN132C
Lattice Semiconductor Corporation
LFE3-95EA-7FN672I
Lattice Semiconductor Corporation
EP3CLS150F780C7N
Intel