Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / EMB10T2R
Manufacturer Part Number | EMB10T2R |
---|---|
Future Part Number | FT-EMB10T2R |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
EMB10T2R Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 2.2 kOhms |
Resistor - Emitter Base (R2) | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | 250MHz |
Power - Max | 150mW |
Mounting Type | Surface Mount |
Package / Case | SOT-563, SOT-666 |
Supplier Device Package | EMT6 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
EMB10T2R Weight | Contact Us |
Replacement Part Number | EMB10T2R-FT |
RN2902,LF(CT
Toshiba Semiconductor and Storage
RN2903,LF(CT
Toshiba Semiconductor and Storage
RN2904,LF(CT
Toshiba Semiconductor and Storage
RN4901,LF(CT
Toshiba Semiconductor and Storage
RN4905,LF(CT
Toshiba Semiconductor and Storage
RN4907,LF
Toshiba Semiconductor and Storage
RN4983,LF(CT
Toshiba Semiconductor and Storage
RN4984,LF(CT
Toshiba Semiconductor and Storage
RN4987,LF(CT
Toshiba Semiconductor and Storage
RN1901,LF(CT
Toshiba Semiconductor and Storage
LFXP2-5E-5TN144I
Lattice Semiconductor Corporation
LCMXO1200C-5T144C
Lattice Semiconductor Corporation
APA150-BGG456
Microsemi Corporation
5SGXEA3K3F35C2N
Intel
XC4020XL-09BG256C
Xilinx Inc.
XCV50-5BG256I
Xilinx Inc.
AGL1000V2-FG144
Microsemi Corporation
10AX066K1F35E1SG
Intel
EP1C4F400C8N
Intel
EP4CGX22CF19I7
Intel