Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / FCH072N60
Manufacturer Part Number | FCH072N60 |
---|---|
Future Part Number | FT-FCH072N60 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | SuperFET® II |
FCH072N60 Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25°C | 52A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 72 mOhm @ 26A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs | 125nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 5890pF @ 380V |
FET Feature | - |
Power Dissipation (Max) | 481W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247 |
Package / Case | TO-247-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FCH072N60 Weight | Contact Us |
Replacement Part Number | FCH072N60-FT |
GP1M005A050FH
Global Power Technologies Group
GP1M005A050FSH
Global Power Technologies Group
GP1M006A065F
Global Power Technologies Group
GP1M006A065FH
Global Power Technologies Group
GP1M006A070F
Global Power Technologies Group
GP1M006A070FH
Global Power Technologies Group
GP1M007A090FH
Global Power Technologies Group
GP1M008A025FG
Global Power Technologies Group
GP1M008A050FG
Global Power Technologies Group
GP1M008A080FH
Global Power Technologies Group
LCMXO2-7000HE-6TG144I
Lattice Semiconductor Corporation
XC6SLX25-N3FGG484I
Xilinx Inc.
M2GL090T-FG484
Microsemi Corporation
M7A3P1000-PQ208
Microsemi Corporation
5SGXEB5R3F43C3N
Intel
XC4VFX40-10FF1152I
Xilinx Inc.
A40MX04-1PLG84M
Microsemi Corporation
A42MX16-2PL84I
Microsemi Corporation
LFXP2-30E-7FN484C
Lattice Semiconductor Corporation
5CGXFC4C6U19I7N
Intel