Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / FJNS3207RBU

| Manufacturer Part Number | FJNS3207RBU |
|---|---|
| Future Part Number | FT-FJNS3207RBU |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | - |
| FJNS3207RBU Status (Lifecycle) | In Stock |
| Part Status | Obsolete |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 250MHz |
| Power - Max | 300mW |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 Short Body |
| Supplier Device Package | TO-92S |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| FJNS3207RBU Weight | Contact Us |
| Replacement Part Number | FJNS3207RBU-FT |

PDTC123JT,215
Nexperia USA Inc.

PDTC143XT,215
Nexperia USA Inc.

PDTD123YT,215
Nexperia USA Inc.

PDTB113ZT,215
Nexperia USA Inc.

PDTC123JT,235
Nexperia USA Inc.

PDTC143ZT,235
Nexperia USA Inc.

PDTC143TT,215
Nexperia USA Inc.

PDTC124TT,215
Nexperia USA Inc.

PDTC143ET,215
Nexperia USA Inc.

PDTC144ET,215
Nexperia USA Inc.

XC3S200-5TQ144C
Xilinx Inc.

XC6SLX45T-3CSG484C
Xilinx Inc.

M1A3P600-PQG208I
Microsemi Corporation

5SGXMA5K2F40I2LN
Intel

5SGXMA4K2F40I2N
Intel

XC6VLX130T-L1FFG1156C
Xilinx Inc.

LCMXO2-7000ZE-3FG484C
Lattice Semiconductor Corporation

LCMXO2-7000HC-5BG332C
Lattice Semiconductor Corporation

LCMXO3LF-9400C-5BG256C
Lattice Semiconductor Corporation

EP4CE55F29C7N
Intel