Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / FJV4113RMTF

| Manufacturer Part Number | FJV4113RMTF |
|---|---|
| Future Part Number | FT-FJV4113RMTF |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | - |
| FJV4113RMTF Status (Lifecycle) | In Stock |
| Part Status | Active |
| Transistor Type | PNP - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| Frequency - Transition | 200MHz |
| Power - Max | 200mW |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| FJV4113RMTF Weight | Contact Us |
| Replacement Part Number | FJV4113RMTF-FT |

BCR533E6327HTSA1
Infineon Technologies

UNR221M00L
Panasonic Electronic Components

FJV3114RMTF
ON Semiconductor

BCR183E6327HTSA1
Infineon Technologies

UNR211V00L
Panasonic Electronic Components

BCR142E6327HTSA1
Infineon Technologies

BCR198E6327HTSA1
Infineon Technologies

BCR512E6327HTSA1
Infineon Technologies

BCR555E6327HTSA1
Infineon Technologies

FJV3110RMTF
ON Semiconductor