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Infineon Technologies IAUT200N08S5N023ATMA1

Name: IAUT200N08S5N023ATMA1
Brand: Infineon Technologies
SKU: IAUT200N08S5N023ATMA1
Price: 1.75736 USD
Availability: InStock
Rating: 4.8 (134 reviews)

MFG Part Number: IAUT200N08S5N023ATMA1

Available Quantity: 79450 Pieces

Reference Price: USD 1.75736

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™-5 80V 200A 2.3MOHM TOLL

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IAUT200N08S5N023ATMA1.pdf

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IAUT200N08S5N023ATMA1 Specifications

Manufacturer Part Number	IAUT200N08S5N023ATMA1
Future Part Number	FT-IAUT200N08S5N023ATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™-5
IAUT200N08S5N023ATMA1 Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	80V
Current - Continuous Drain (Id) @ 25°C	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	2.3 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	3.8V @ 130µA
Gate Charge (Qg) (Max) @ Vgs	110nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7670pF @ 40V
FET Feature	-
Power Dissipation (Max)	200W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-HSOF-8-1
Package / Case	8-PowerSFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IAUT200N08S5N023ATMA1 Weight	Contact Us
Replacement Part Number	IAUT200N08S5N023ATMA1-FT

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