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Infineon Technologies IPB072N15N3GE8187ATMA1

Name: IPB072N15N3GE8187ATMA1
Brand: Infineon Technologies
SKU: IPB072N15N3GE8187ATMA1
Availability: InStock
Rating: 4.9 (383 reviews)

MFG Part Number: IPB072N15N3GE8187ATMA1

Available Quantity: 33380 Pieces

Reference Price: USD 0

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Infineon Technologies

Brief Description: OptiMOS™ MOSFET N-CH 150V 100A TO263-3

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: IPB072N15N3GE8187ATMA1.pdf

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IPB072N15N3GE8187ATMA1 Specifications

Manufacturer Part Number	IPB072N15N3GE8187ATMA1
Future Part Number	FT-IPB072N15N3GE8187ATMA1
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	OptiMOS™
IPB072N15N3GE8187ATMA1 Status (Lifecycle)	In Stock
Part Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	150V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	8V, 10V
Rds On (Max) @ Id, Vgs	7.2 mOhm @ 100A, 10V
Vgs(th) (Max) @ Id	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs	93nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	5470pF @ 75V
FET Feature	-
Power Dissipation (Max)	300W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	PG-TO263-3-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
IPB072N15N3GE8187ATMA1 Weight	Contact Us
Replacement Part Number	IPB072N15N3GE8187ATMA1-FT

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