Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / JANTXV2N6052
Manufacturer Part Number | JANTXV2N6052 |
---|---|
Future Part Number | FT-JANTXV2N6052 |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Military, MIL-PRF-19500/501 |
JANTXV2N6052 Status (Lifecycle) | In Stock |
Part Status | Discontinued at Future Semiconductor |
Transistor Type | PNP - Darlington |
Current - Collector (Ic) (Max) | 12A |
Voltage - Collector Emitter Breakdown (Max) | 100V |
Vce Saturation (Max) @ Ib, Ic | 3V @ 120mA, 12A |
Current - Collector Cutoff (Max) | 1mA |
DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 6A, 3V |
Power - Max | 150W |
Frequency - Transition | - |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Package / Case | TO-204AA, TO-3 |
Supplier Device Package | TO-3 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
JANTXV2N6052 Weight | Contact Us |
Replacement Part Number | JANTXV2N6052-FT |
JANTX2N5015
Microsemi Corporation
JANTX2N5015S
Microsemi Corporation
JANTX2N5038
Microsemi Corporation
JANTX2N5039
Microsemi Corporation
JANTX2N5302
Microsemi Corporation
JANTX2N5416U4
Microsemi Corporation
JANTX2N5416UA
Microsemi Corporation
JANTX2N5660
Microsemi Corporation
JANTX2N5661
Microsemi Corporation
JANTX2N5662
Microsemi Corporation
A54SX16A-2FG256I
Microsemi Corporation
LCMXO640E-3FTN256I
Lattice Semiconductor Corporation
EP2C50F672C7N
Intel
EP3C5U256C7
Intel
5SGXEA9N3F45C2N
Intel
XC7VX485T-3FFG1157E
Xilinx Inc.
XC2V8000-5FFG1152I
Xilinx Inc.
LCMXO3L-9400E-5BG256C
Lattice Semiconductor Corporation
EP3SL50F780C3
Intel
EP1C4F400I7N
Intel