Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Arrays, Pre-Biased / MUN5115DW1T1G
Manufacturer Part Number | MUN5115DW1T1G |
---|---|
Future Part Number | FT-MUN5115DW1T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
MUN5115DW1T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | 2 PNP - Pre-Biased (Dual) |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 10 kOhms |
Resistor - Emitter Base (R2) | - |
DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
Vce Saturation (Max) @ Ib, Ic | 250mV @ 1mA, 10mA |
Current - Collector Cutoff (Max) | 500nA |
Frequency - Transition | - |
Power - Max | 250mW |
Mounting Type | Surface Mount |
Package / Case | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package | SC-88/SC70-6/SOT-363 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
MUN5115DW1T1G Weight | Contact Us |
Replacement Part Number | MUN5115DW1T1G-FT |
NSBC113EDXV6T1
ON Semiconductor
NSBC113EDXV6T1G
ON Semiconductor
NSBC113EDXV6T5
ON Semiconductor
NSBC113EPDXV6T1
ON Semiconductor
NSBC114EDXV6T1
ON Semiconductor
NSBC114EPDXV6T1
ON Semiconductor
NSBC114TDXV6T1
ON Semiconductor
NSBC114TDXV6T5
ON Semiconductor
NSBC114TPDXV6T1
ON Semiconductor
NSBC114YDXV6T1
ON Semiconductor
XCS30XL-5TQ144C
Xilinx Inc.
EP1K50TI144-2N
Intel
EP20K30ETC144-2X
Intel
EPF10K30ETC144-2X
Intel
EPF6016ATI144-3
Intel
ICE40HX1K-VQ100
Lattice Semiconductor Corporation
LFXP3E-5TN100C
Lattice Semiconductor Corporation
M1AGL600V2-FGG484I
Microsemi Corporation
EP20K400EFC672-3N
Intel
EP2C8F256C7
Intel