Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single / NSV40200UW6T1G
Manufacturer Part Number | NSV40200UW6T1G |
---|---|
Future Part Number | FT-NSV40200UW6T1G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
NSV40200UW6T1G Status (Lifecycle) | In Stock |
Part Status | Active |
Transistor Type | PNP |
Current - Collector (Ic) (Max) | 2A |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 20mA, 2A |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 1A, 2V |
Power - Max | 875mW |
Frequency - Transition | 140MHz |
Operating Temperature | -55°C ~ 150°C (TJ) |
Mounting Type | Surface Mount |
Package / Case | 6-WDFN Exposed Pad |
Supplier Device Package | 6-WDFN (2x2) |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NSV40200UW6T1G Weight | Contact Us |
Replacement Part Number | NSV40200UW6T1G-FT |
NJVMJD45H11D3T4G
ON Semiconductor
NJVNJD2873T4G-VF01
ON Semiconductor
MJD44H11G
ON Semiconductor
NJVMJD112G
ON Semiconductor
NJVMJD31CG
ON Semiconductor
MJD127G
ON Semiconductor
MJD112G
ON Semiconductor
NSV1C300ET4G-VF01
ON Semiconductor
NJVNJD35N04T4G
ON Semiconductor
MJD117T4G
ON Semiconductor
LCMXO2-256ZE-1TG100C
Lattice Semiconductor Corporation
XC3S1000L-4FGG320C
Xilinx Inc.
M7A3P1000-PQG208
Microsemi Corporation
A1020B-PL68I
Microsemi Corporation
XC5VLX110T-2FFG1136C
Xilinx Inc.
M1AFS1500-2FGG676I
Microsemi Corporation
LFXP6C-3Q208I
Lattice Semiconductor Corporation
LFE2-20SE-6F256C
Lattice Semiconductor Corporation
10AX066H4F34I3LG
Intel
EP4SGX110FF35C4N
Intel