Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / NVMJS1D3N04CTWG
Manufacturer Part Number | NVMJS1D3N04CTWG |
---|---|
Future Part Number | FT-NVMJS1D3N04CTWG |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
NVMJS1D3N04CTWG Status (Lifecycle) | In Stock |
Part Status | Active |
FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25°C | 41A (Ta), 235A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 1.3 mOhm @ 50A, 10V |
Vgs(th) (Max) @ Id | 3.5V @ 170µA |
Gate Charge (Qg) (Max) @ Vgs | 65nC @ 10V |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 4300pF @ 25V |
FET Feature | - |
Power Dissipation (Max) | 3.8W (Ta), 128W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount |
Supplier Device Package | 8-LFPAK |
Package / Case | SOT-1205, 8-LFPAK56 |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
NVMJS1D3N04CTWG Weight | Contact Us |
Replacement Part Number | NVMJS1D3N04CTWG-FT |
NP109N04PUK-E1-AY
Renesas Electronics America
NP109N055PUJ-E2B-AY
Renesas Electronics America
NP109N055PUK-E1-AY
Renesas Electronics America
NP110N04PUK-E1-AY
Renesas Electronics America
NP110N055PUG(1)-E1-AY
Renesas Electronics America
NP110N055PUJ-E1B-AY
Renesas Electronics America
NP110N055PUK-E1-AY
Renesas Electronics America
NP15P04SLG(2)-E1-AY
Renesas Electronics America
NP160N04TDG-E1-AY
Renesas Electronics America
NP160N04TUJ-E1-AY
Renesas Electronics America
XCV1000E-8FG900C
Xilinx Inc.
LCMXO640C-4FTN256I
Lattice Semiconductor Corporation
LCMXO3L-9400C-5BG484I
Lattice Semiconductor Corporation
M1AGL250V2-VQ100
Microsemi Corporation
M1AGL250V5-VQG100
Microsemi Corporation
EP2S60F484C5
Intel
5SGXMA7K3F40C3
Intel
XC4020E-2HQ208I
Xilinx Inc.
5AGXMA7G4F35I5N
Intel
EPF8820QC160-4
Intel