Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / RN1103MFV,L3F
Toshiba Semiconductor and Storage RN1103MFV,L3F
- MFG Part Number
- RN1103MFV,L3F
- Available Quantity
- 50380 Pieces
- Reference Price
- USD 0
- Our Price
- We have a big discount, please contact us
- Shipping Date
- We can ship out today
- Manufacturer
- Toshiba Semiconductor and Storage
- Brief Description
- - TRANS PREBIAS NPN 150MW VESM
- Lead Free Status / RoHS Status
- RoHS Compliant (Lead Free)
- Moisture Sensitivity Level (MSL)
- 1 (Unlimited)
- Date Code (D/C)
- New
- Product Category
- Transistors - Bipolar (BJT) - Single, Pre-Biased
- Stock Resource
- Franchised Distributor
- Warranty
- 360 days quality guarantee
- Datasheet
- RN1103MFV,L3F.pdf
RN1103MFV,L3F Specifications
| Manufacturer Part Number | RN1103MFV,L3F |
|---|---|
| Future Part Number | FT-RN1103MFV,L3F |
| SPQ / MOQ | Contact Us |
| Packing Material | Reel/Tray/Tube/Others |
| Series | - |
| RN1103MFV,L3F Status (Lifecycle) | In Stock |
| Part Status | Active |
| Transistor Type | NPN - Pre-Biased |
| Current - Collector (Ic) (Max) | 100mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 @ 10mA, 5V |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA |
| Current - Collector Cutoff (Max) | 500nA |
| Frequency - Transition | - |
| Power - Max | 150mW |
| Mounting Type | Surface Mount |
| Package / Case | SOT-723 |
| Supplier Device Package | VESM |
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
| RN1103MFV,L3F Weight | Contact Us |
| Replacement Part Number | RN1103MFV,L3F-FT |
How To Order?
Request for Quotation - Confirm Price - Order - Payment - Shipment - DoneShipping Methods
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4) TNT (2-5 days)
5) EMS (7-10 days)
6) Normal Post (10-20 days)
7) Others
Freight Calculation: Please contact us
How to Contact?
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