Home / Products / Discrete Semiconductor Products / Diodes - Rectifiers - Single / SRAF10100HC0G
Manufacturer Part Number | SRAF10100HC0G |
---|---|
Future Part Number | FT-SRAF10100HC0G |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | Automotive, AEC-Q101 |
SRAF10100HC0G Status (Lifecycle) | In Stock |
Part Status | Active |
Diode Type | Schottky |
Voltage - DC Reverse (Vr) (Max) | 100V |
Current - Average Rectified (Io) | 10A |
Voltage - Forward (Vf) (Max) @ If | 850mV @ 10A |
Speed | Fast Recovery =< 500ns, > 200mA (Io) |
Reverse Recovery Time (trr) | - |
Current - Reverse Leakage @ Vr | 100µA @ 100V |
Capacitance @ Vr, F | - |
Mounting Type | Through Hole |
Package / Case | TO-220-2 Full Pack |
Supplier Device Package | ITO-220AC |
Operating Temperature - Junction | -55°C ~ 150°C |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
SRAF10100HC0G Weight | Contact Us |
Replacement Part Number | SRAF10100HC0G-FT |
TST10H150CW C0G
Taiwan Semiconductor Corporation
TST20H200CW C0G
Taiwan Semiconductor Corporation
TST30L60CW C0G
Taiwan Semiconductor Corporation
TST10L60CW C0G
Taiwan Semiconductor Corporation
TST20U60CW C0G
Taiwan Semiconductor Corporation
TST40L100CW C0G
Taiwan Semiconductor Corporation
TST30U60C C0G
Taiwan Semiconductor Corporation
TST30L100CW C0G
Taiwan Semiconductor Corporation
TST40L45CW C0G
Taiwan Semiconductor Corporation
TST10H100CW C0G
Taiwan Semiconductor Corporation
A3P400-1FG484I
Microsemi Corporation
M1A3P1000-FGG256
Microsemi Corporation
10M50DCF256C7G
Intel
5SGXEA7N2F40C2N
Intel
EP3SE260H780I3
Intel
XC7V585T-1FF1761I
Xilinx Inc.
M1A3P1000L-1FGG144I
Microsemi Corporation
LFE2-20E-7FN256C
Lattice Semiconductor Corporation
EP3C25F324C6
Intel
5SGXEA3H1F35C2N
Intel