Home / Products / Discrete Semiconductor Products / Transistors - FETs, MOSFETs - Single / STB6N65M2

            | Manufacturer Part Number | STB6N65M2 | 
|---|---|
| Future Part Number | FT-STB6N65M2 | 
| SPQ / MOQ | Contact Us | 
| Packing Material | Reel/Tray/Tube/Others | 
| Series | MDmesh™ | 
| STB6N65M2 Status (Lifecycle) | In Stock | 
| Part Status | Active | 
| FET Type | N-Channel | 
| Technology | MOSFET (Metal Oxide) | 
| Drain to Source Voltage (Vdss) | 650V | 
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) | 
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 
| Rds On (Max) @ Id, Vgs | 1.35 Ohm @ 2A, 10V | 
| Vgs(th) (Max) @ Id | 4V @ 250µA | 
| Gate Charge (Qg) (Max) @ Vgs | 9.8nC @ 10V | 
| Vgs (Max) | ±25V | 
| Input Capacitance (Ciss) (Max) @ Vds | 226pF @ 100V | 
| FET Feature | - | 
| Power Dissipation (Max) | 60W (Tc) | 
| Operating Temperature | -55°C ~ 150°C (TJ) | 
| Mounting Type | Surface Mount | 
| Supplier Device Package | D2PAK | 
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 
| Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN | 
| STB6N65M2 Weight | Contact Us | 
| Replacement Part Number | STB6N65M2-FT | 

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