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Toshiba Semiconductor and Storage TPH6R30ANL,L1Q

Name: TPH6R30ANL,L1Q
Brand: Toshiba Semiconductor and Storage
SKU: TPH6R30ANL,L1Q
Price: 0.33936 USD
Availability: InStock
Rating: 4.9 (385 reviews)

MFG Part Number: TPH6R30ANL,L1Q

Available Quantity: 97250 Pieces

Reference Price: USD 0.33936

Our Price: We have a big discount, please contact us

Shipping Date: We can ship out today

Manufacturer: Toshiba Semiconductor and Storage

Brief Description: U-MOSVIII-H X35 PB-F POWER MOSFET TRANSISTOR

Lead Free Status / RoHS Status: RoHS Compliant (Lead Free)

Moisture Sensitivity Level (MSL): 1 (Unlimited)

Date Code (D/C): New

Product Category: Transistors - FETs, MOSFETs - Single

Stock Resource: Franchised Distributor

Warranty: 360 days quality guarantee

Datasheet: TPH6R30ANL,L1Q.pdf

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TPH6R30ANL,L1Q Specifications

Manufacturer Part Number	TPH6R30ANL,L1Q
Future Part Number	FT-TPH6R30ANL,L1Q
SPQ / MOQ	Contact Us
Packing Material	Reel/Tray/Tube/Others
Series	U-MOSVIII-H
TPH6R30ANL,L1Q Status (Lifecycle)	In Stock
Part Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100V
Current - Continuous Drain (Id) @ 25°C	66A (Ta), 45A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	6.3 mOhm @ 22.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 500µA
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	4300pF @ 50V
FET Feature	-
Power Dissipation (Max)	2.5W (Ta), 54W (Tc)
Operating Temperature	150°C
Mounting Type	Surface Mount
Supplier Device Package	8-SOP Advance (5x5)
Package / Case	8-PowerVDFN
Country of Origin	USA/JAPAN/MALAYSIA/MEXICO/CN
TPH6R30ANL,L1Q Weight	Contact Us
Replacement Part Number	TPH6R30ANL,L1Q-FT

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