Home / Products / Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single, Pre-Biased / FJNS3208RTA
Manufacturer Part Number | FJNS3208RTA |
---|---|
Future Part Number | FT-FJNS3208RTA |
SPQ / MOQ | Contact Us |
Packing Material | Reel/Tray/Tube/Others |
Series | - |
FJNS3208RTA Status (Lifecycle) | In Stock |
Part Status | Obsolete |
Transistor Type | NPN - Pre-Biased |
Current - Collector (Ic) (Max) | 100mA |
Voltage - Collector Emitter Breakdown (Max) | 50V |
Resistor - Base (R1) | 47 kOhms |
Resistor - Emitter Base (R2) | 22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) | 100nA (ICBO) |
Frequency - Transition | 250MHz |
Power - Max | 300mW |
Mounting Type | Through Hole |
Package / Case | TO-226-3, TO-92-3 Short Body |
Supplier Device Package | TO-92S |
Country of Origin | USA/JAPAN/MALAYSIA/MEXICO/CN |
FJNS3208RTA Weight | Contact Us |
Replacement Part Number | FJNS3208RTA-FT |
PDTD143ETVL
Nexperia USA Inc.
PDTD143XTVL
Nexperia USA Inc.
FJNS3201RBU
ON Semiconductor
FJNS3202RBU
ON Semiconductor
FJNS3204RBU
ON Semiconductor
FJNS3204RTA
ON Semiconductor
FJNS3205RBU
ON Semiconductor
FJNS3206RBU
ON Semiconductor
FJNS3207RBU
ON Semiconductor
FJNS3208RBU
ON Semiconductor
A42MX36-3BG272
Microsemi Corporation
AFS1500-1FG484I
Microsemi Corporation
EP1K10TC100-2
Intel
XC7V585T-1FFG1761I
Xilinx Inc.
XC7K325T-2FB676I
Xilinx Inc.
APA600-FGG676I
Microsemi Corporation
LFE2M20E-6FN484I
Lattice Semiconductor Corporation
LCMXO256C-4M100C
Lattice Semiconductor Corporation
LCMXO2-4000HE-4MG132I
Lattice Semiconductor Corporation
10AX016E4F29E3SG
Intel